MRFE6VP5300NR1 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 27dB 300W TO-270 WB-4
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz
Features
1, Wide Operating Frequency Range
2, Extreme Ruggedness
3, Unmatched Input and Output Allowing Wide Frequency Range Utilization
4, Integrated Stability Enhancements
5, Low Thermal Resistance Integrated ESD Protection Circuitry
6, In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Ree
| Transistor Type |
LDMOS (Dual) |
|
| Frequency |
230MHz |
|
| Gain |
27dB |
|
| Voltage - Test |
50V |
|
| Current Rating |
- |
|
| Noise Figure |
- |
|
| Current - Test |
100mA |
|
| Power - Output |
300W |
|
| Voltage - Rated |
133V |
|
| Package / Case |
TO-270AB |
|
| Supplier Device Package |
TO-270 WB-4 |
|
| Base Part Number |
MRFE6VP5300 |
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Product Tags:
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MRFE6VP5300NR1 Mosfet Power Transistor 230MHz 27dB 300W TO-270 WB-4 Images
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